- 您现在的位置：买卖IC网 > Sheet目录515 > SIR436DP-T1-GE3 (Vishay Siliconix)MOSFET N-CH D-S 25V PPAK 8SOIC
SiR436DP
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
25
24
- 5.5
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
1
3
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 25 V, V GS = 0 V
V DS = 25 V, V GS = 0 V, T J = 55 °C
V DS ≥ 5 V, V GS = 10 V
50
± 100
1
5
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 20 A
V GS = 4.5 V, I D = 18 A
V DS = 15 V, I D = 20 A
0.0038
0.005
60
0.0046
0.0062
Ω
S
Dynamic
b
Input Capacitance
C iss
1715
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 15 V, V GS = 0 V, f = 1 MHz
425
170
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 12.5 V, V GS = 10 V, I D = 20 A
V DS = 12.5 V, V GS = 4.5 V, I D = 20 A
31
13
4.5
47
20
nC
Gate-Drain Charge
Q gd
3.9
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
R g
t d(on)
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
f = 1 MHz
V DD = 12.5 V, R L = 12.5 Ω
I D ? 1.0 A, V GEN = 4.5 V, R g = 1 Ω
V DD = 12.5 V, R L = 12.5 Ω
I D ? 1.0 A, V GEN = 10 V, R g = 1 Ω
1.0
22
11
32
8
13
8
30
9
2.0
40
25
50
25
25
15
40
15
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
I S
I SM
T C = 25 °C
40
80
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 4.1 A, V GS = 0 V
I F = 4.1 A, dI/dt = 100 A/μs, T J = 25 °C
0.75
28
20
15
13
1.2
56
40
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69011
S-82666-Rev. A, 03-Nov-08
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SIR440DP-T1-GE3
MOSFET N-CH 20V 60A PPAK 8SOIC
SIR462DP-T1-GE3
MOSFET N-CH 30V 30A PPAK 8SOIC
SIR464DP-T1-GE3
MOSFET N-CH 30V 50A PPAK 8SOIC
SIR468DP-T1-GE3
MOSFET N-CH 30V 40A PPAK 8SOIC
SIR470DP-T1-GE3
MOSFET N-CH 40V 60A PPAK 8SOIC
SIR472DP-T1-GE3
MOSFET N-CH 30V 20A PPAK 8SOIC
SIR474DP-T1-GE3
MOSFET N-CH D-S 30V PPAK 8SOIC
SIR494DP-T1-GE3
MOSFET N-CH D-S 12V PPAK 8SOIC
相关代理商/技术参数
SIR438DP
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 25-V (D-S) MOSFET
SIR438DP-T1-GE3
功能描述:MOSFET 25V 60A 83W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR440DP
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET
SIR440DP-T1-GE3
功能描述:MOSFET 20V 60A 104W 1.55mohm @ 10V
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR460DP
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SIR460DP-T1-GE3
功能描述:MOSFET 30V 40A 48W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR462DP
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SIR462DP-T1-GE3
功能描述:MOSFET 30V 30A 41.7W 7.9mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube